onsemi NIV1x ESD Suppressors/TVS Diodes
onsemi NIV1x ESD Suppressors/TVS Diodes are designed to protect high-speed data lines from ESD and short-to-vehicle battery situations. These diodes feature ultra-low capacitance and low ESD clamping voltage. The NIV1x diodes are an ideal solution for protecting voltage-sensitive high-speed data lines, while the low RDS(on) FET limits distortion on the signal lines. These onsemi diodes include short-to-battery blocking and short-to-USB VBUS blocking integrated MOSFETs. The NIV1x ESD suppressors operate at -55°C to 150°C temperature range, 30V drain to source voltage, and ±10V gate to source voltage. These diodes are ideal for automotive high-speed signal pairs, USB 2.0, and Low-Voltage Differential Signaling (LVDS).
Features
- Low capacitance
- Integrated MOSFETs
- Short-to-battery blocking
- Short-to-USB VBUS blocking
- Wettable flanks for optimal automated optical inspection (AOI)
- Qualified and PPAP-capable
- Lead-free, halogen-free/BFR-free, and RoHS compliance
- NIV prefix for automotive and other applications that require unique site and control change requirements
Specifications
- NIV1161x
- 0.65pF capacitance
- 16V reverse working voltage
- 1μA reverse leakage current
- NIV1241
- 0.66pF capacitance
- 23.5V reverse working voltage
- 0.5μA reverse leakage current
- -55°C to +150°C operating and storage temperature range
- 30V drain to source voltage
- ±10V gate to source voltage
Applications
- Automotive high-speed signal pairs
- USB 2.0
- LVDS
Location Circuit
Publicado: 2020-12-02
| Actualizado: 2024-05-31